M58WR064B100ZB6T datasheet(1/81 Pages) STMICROELECTRONICS

номер детали	M58WR064B100ZB6T

подробное описание детали	64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

PDF	81 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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PRODUCT PREVIEW

April 2002

This is preliminary information on a new product now in development. Details are subject to change without notice.

M58WR064T

M58WR064B

64 Mbit (4Mb x 16, Multiple Bank, Burst )

1.8V Supply Flash Memory

FEATURES SUMMARY

s

SUPPLY VOLTAGE

–VDD = 1.65V to 2.2V for Program, Erase and

Read

–VDDQ = 1.65V to 3.3V for I/O Buffers

–VPP = 12V for fast Program (optional)

s

SYNCHRONOUS / ASYNCHRONOUS READ

– Synchronous Burst Read mode : 52MHz

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 70, 85, 100 ns

s

PROGRAMMING TIME

–8

µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

s

MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

s

DUAL OPERATIONS

– Program Erase in one Bank while Read in

others

– No delay between Read and Write operations

s

BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

s

SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

s

COMMON FLASH INTERFACE (CFI)

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

Figure 1. Packages

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58WR064T: 8810h

– Bottom Device Code, M58WR064B: 8811h

FBGA

VFBGA56 (ZB)

7.7 x 9 mm

Аналогичный номер детали - M58WR064B100ZB6T

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	M58WR064	1Mb / 82P	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 19-Feb-2003
	M58WR064E-ZBT	1Mb / 82P	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 19-Feb-2003
	M58WR064EB	1Mb / 82P	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 19-Feb-2003
	M58WR064EB10ZB6T	1Mb / 82P	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 19-Feb-2003
	M58WR064EB70ZB6T	1Mb / 82P	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 19-Feb-2003

More results

Аналогичное описание - M58WR064B100ZB6T

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	M58CR032C	435Kb / 63P	32 Mbit 2Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 06-Sep-2002
	M58CR064C	1,000Kb / 70P	64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory 06-Jun-2003
	M58MR064C	399Kb / 52P	64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory 07-Mar-2002
	M58WR064ET	1Mb / 82P	64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 19-Feb-2003
	M58WR128ET	1Mb / 87P	128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory 21-May-2003
	M58WR032FT	1Mb / 86P	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory 18-Nov-2004
	M58WR064FT	573Kb / 87P	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V Supply Flash Memory 08-Oct-2004
	M58WR032ET	558Kb / 81P	32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory 13-Apr-2004
Numonyx B.V	M58WR064HT	1Mb / 111P	64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
Numonyx B.V	M58WR064HU	2Mb / 114P	64 Mbit (4Mb x16, Mux I/O, Multiple Bank, Burst) 1.8V supply Flash memories

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Аналогичный номер детали - M58WR064B100ZB6T

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