2SCR574D datasheet(1/2 Pages) ISC

номер детали	2SCR574D

подробное описание детали	Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SCR574D

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 80V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):0.3V(Max) @IC= 1.0A

APPLICATIONS

· Switching Regulators

· DC-DC Converters

· Power Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current

2.0

A

ICP

Collector Current-Pulse

4.0

A

IB

Base current

0.5

A

PC

Total Power Dissipation

@ TC=25℃

10

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - 2SCR574D

производитель	номер детали	датащи	подробное описание детали
Rohm	2SCR574D	803Kb / 7P	NPN 2.0A 80V Middle Power Transistor
	2SCR574D3	1Mb / 11P	NPN 2.0A 80V Power Transistor
	2SCR574D3FRA	1Mb / 10P	NPN 2.0A 80V Power Transistor
	2SCR574DA07	799Kb / 7P	NPN 2.0A 80V Middle Power Transistor

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Аналогичное описание - 2SCR574D

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Advanced Semiconductor	MRF342	145Kb / 1P	SILICON POWER NPN TRANSISTOR
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Microsemi Corporation	2N2880	45Kb / 2P	NPN POWER SILICON TRANSISTOR
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2SCR574D датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

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Аналогичный номер детали - 2SCR574D

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