Silicon NPN Power Transistor

2SCR574D

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

BVCBO

Collector-base breakdownvoltage

IC= 0.1mA, IE= 0A

80

--

--

V

BVCEO

Collector-emitter breakdownvoltage

IC= 1mA, IB= 0A

80

--

--

V

BVEEO

Emitter-base breakdown voltage

IE= 0.1mA, IC= 0A

6

--

--

V

ICBO

Collector Cutoff Current

VCB= 80V, IE= 0A

--

--

1

uA

IEBO

Emitter Cutoff Current

VEB= 4V, IC= 0A

--

--

1

uA

hFE

DC Current Gain

IC= 0.1A, VCE= 3V

120

--

390

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A, IB= 50mA

--

--

0.3

V

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