поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

SSF68083X датащи(PDF) 2 Page - Silikron Semiconductor Co.,LTD.

номер детали SSF68083X
подробное описание детали  Advanced MOSFETprocess technology
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  SILIKRON [Silikron Semiconductor Co.,LTD.]
домашняя страница  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSF68083X датащи(HTML) 2 Page - Silikron Semiconductor Co.,LTD.

  SSF68083X Datasheet HTML 1Page - Silikron Semiconductor Co.,LTD. SSF68083X Datasheet HTML 2Page - Silikron Semiconductor Co.,LTD. SSF68083X Datasheet HTML 3Page - Silikron Semiconductor Co.,LTD. SSF68083X Datasheet HTML 4Page - Silikron Semiconductor Co.,LTD. SSF68083X Datasheet HTML 5Page - Silikron Semiconductor Co.,LTD. SSF68083X Datasheet HTML 6Page - Silikron Semiconductor Co.,LTD. SSF68083X Datasheet HTML 7Page - Silikron Semiconductor Co.,LTD. SSF68083X Datasheet HTML 8Page - Silikron Semiconductor Co.,LTD.  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
SSF68083X &SSF6808F3X
©Silikron Microelectronics (Suzhou) Co.,Ltd
www.silikron.com
Version : 1.0
page 2 of 8
Thermal Resistance
Symbol
Characteristics
TO220
TO220F
Units
RθJC
Junction-to-case③
1.36
3.3
/W
Electrical Characteristics @TA=25℃unless otherwise specified
Symbol Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)DSS
Drain-to-Source breakdown voltage
60
V
VGS = 0V, ID = 250μA
RDS(on)
Static Drain-to-Source on-resistance
6.0
8
VGS=10V,ID =20A
VGS(th)
Gate threshold voltage
2
4
V
VDS = VGS, ID =250μA
IDSS
Drain-to-Source leakage current
1
μA
VDS =60V,VGS = 0V
IGSS
Gate-to-Source forward leakage
100
nA
VGS =20V
-100
VGS = -20V
Qg
Total gate charge
72
nC
ID = 30A,
VDS=30V,
VGS = 15V
Qgs
Gate-to-Source charge
16
Qgd
Gate-to-Drain("Miller") charge
23
td(on)
Turn-on delay time
17
ns
VGS=10V, VDS=30V,
RGEN=3Ω
ID = 30A
tr
Rise time
28
td(off)
Turn-Off delay time
39
tf
Fall time
12
Ciss
Input capacitance
3951
pF
VGS = 0V
VDS = 50V
ƒ = 1MHz
Coss
Output capacitance
203
Crss
Reverse transfer capacitance
180
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
IS
Continuous Source Current
(Body Diode)
80
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
320
A
VSD
Diode Forward Voltage
0.88
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
31.4
ns
IS=30A,di/dt=100A/us
Qrr
Reverse Recovery Charge
31.1
nC



Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com