SSF68083X &SSF6808F3X

©Silikron Microelectronics (Suzhou) Co.,Ltd

www.silikron.com

Version :1.0

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Main Product Characteristics:

Features and Benefits:

Description:

Absolute Max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

80

A

IDM

Pulsed Drain Current②

320

PD @TC = 25°C

Power Dissipation③

TO220

92

W

TO220F

38

VDS

Drain-Source Voltage

60

V

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy @ L=0.5mH

191

mJ

TJ TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

VDSS

60V

RDS(on)

6.0mΩ (typ.)

ID

80A

SchematicDiagram



Advanced MOSFETprocess technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



150℃ operating temperature

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.

TO-220

SSF68083X

TO-220F

SSF6808F3X