MCP6G01-ESLASHMS datasheet(3/38 Pages) MICROCHIP

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DS22004B-page 3

MCP6G01/1R/1U/2/3/4

Power Supply

Supply Voltage

VDD

1.8

—

5.5

Quiescent Current per Amplifier

110

170

µA

IO = 0 (Note 2)

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, G = +1 V/V,

VIN = (0.3V)/G, RL = 100 kΩ to VDD/2, GSEL = VDD/2, and CS is tied low.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note 1:

RLAD (RF+RG in Figure 4-1) connects VSS, VOUT, and the inverting input of the internal amplifier. Thus, VSS is coupled

to the internal amplifier and the PSRR spec describes PSRR+ only. It is recommended that the VSS pin be tied directly

to ground to avoid noise problems.

IQ includes current in RLAD (typically 0.6 µA at VOUT = 0.3V), and excludes digital switching currents.

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, G = +1 V/V,

VIN = (0.3V)/G, RL = 100 kΩ to VDD/2, CL = 60 pF, GSEL = VDD/2, and CS is tied low.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Frequency Response

-3dB Bandwidth

—

900

—

kHz

G = +1, VOUT < 100 mVP-P (Note 1)

—

350

—

kHz

G = +10, VOUT < 100 mVP-P (Note 1)

—

250

—

kHz

G = +50, VOUT < 100 mVP-P (Note 1)

Gain Peaking

GPK

—

0.3

—

G = +1; VOUT < 100 mVP-P

GPK

—

G = +10, VOUT < 100 mVP-P

GPK

—

0.7

—

G = +50; VOUT < 100 mVP-P

Total Harmonic Distortion plus Noise

f = 1 kHz, G = +1 V/V

THD+N

—

0.0029

—

VOUT = 1.75V ± 1.4VPK, VDD = 5.0V,

BW = 80 kHz

f = 1 kHz, G = +10 V/V

THD+N

—

0.18

—

VOUT = 2.5V ± 1.4VPK, VDD = 5.0V,

BW = 80 kHz

f = 1 kHz, G = +50 V/V

THD+N

—

1.3

—

VOUT = 2.5V ± 1.4VPK, VDD = 5.0V,

BW = 80 kHz

Step Response

Slew Rate

—

0.50

—

V/µs

G = 1

—

2.3

—

V/µs

G = 10

—

4.5

—

V/µs

G = 50

Noise

Input Noise Voltage

Eni

—9

—

µVP-P f = 0.1 Hz to 10 Hz (Note 2)

Eni

—50

—

µVP-P f = 0.1 Hz to 30 kHz (Note 2)

Input Noise Voltage Density

eni

—38

—

nV/

√Hz G = +1 V/V, f = 10 kHz (Note 2)

eni

—46

—

nV/

√Hz G = +10 V/V, f = 10 kHz (Note 2)

eni

—41

—

nV/

√Hz G = +50 V/V, f = 10 kHz (Note 2)

Input Noise Current Density

ini

—4

—

fA/

√Hz f = 10 kHz

Note 1:

See Table 4-1 for a list of typical numbers and Figure 2-31 for the frequency response versus gain.

Eni and eni include ladder resistance thermal noise.

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