MCP23016-ISLASHML datasheet(20/38 Pages) MICROCHIP

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MCP23016

DS20090C-page 20

2.1

DC Characteristics

TABLE 2-1:

DC CHARACTERISTICS

Standard Operating Conditions (unless otherwise stated)

Operating temperature:

-40°C

≤ TA ≤ +85°C for industrial

Param

No.

Characteristic

Sym

Min

Typ†

Max

Units

Conditions

D001

Supply Voltage

VDD

2.0

—

5.5

D002

Standby Current

IDD

—

0.4

IARES = 1

D003

Standby Current

IPD

—

µA

IARES = 0

Input Low Voltage

I/O ports

VIL

D004

TTL buffer

Vss

—

0.15 VDD

For entire VDD range

D004A

Vss

—

0.8V

4.5V

≤ VDD ≤ 5.5V

D005

Schmitt Trigger buffer

Vss

—

0.2 VDD

Input High Voltage

I/O ports

VIH

—

D006

TTL buffer

2.0

—

VDD

V4.5V

≤ VDD ≤ 5.5V

D006A

0.25 VDD

+ 0.8V

—VDD

For entire VDD range

D007

Schmitt Trigger buffer

0.8 VDD

—VDD

For entire VDD range

Input Leakage Current

D008

I/O ports

IIL

——

±1.0

µA

Vss

≤ VPIN ≤ VDD,

Pin at hi-impedance

D009

CLK

—

±5.0

µA

Vss

≤ VPIN ≤ VDD

Output Low Voltage

D010

I/O Ports

VOL

——

0.6

IOL = 8.5 mA, VDD = 4.5V

Output High Voltage

D010

I/O Ports

VOH

VDD-0.7

—

IOH = 3.0 mA, VDD = 4.5V

D011

VDD start voltage to ensure

internal POR signal

VPOR

—Vss

—

D012

VDD rise rate to ensure

internal POR signal

SVDD

0.05

—

V/ms Note 1

DC Trip Point

VTPOR

1.5

1.7

1.9

DC Slow Ramp

D012

VDD rise rate to ensure

internal POR signal with

PWRT enabled

SVDD

0.05

—

V/ms Note 1

DC Current Draw

IPOR

—

5.0

—

µA

At 5.0V (1 µ/Volt typical)

Note 1:

These parameters are characterized but not tested.

Data in "Typ" column is at 5V, 25°C unless otherwise stated. These parameters are for design guidance

only and are not tested.

Standby current is measured with all I/O in hi-impedance state and tied to VDD and VSS.

For RC CLK, current through REXT is not included. The current through the resistor can be estimated by

the formula

Ir = VDD/2 REXT (mA) with REXT in kohm.

Negative current is defined as coming out of the pin.

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