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APTM50AM24SCG датащи(PDF) 4 Page - Microsemi Corporation

номер детали APTM50AM24SCG
подробное описание детали  Phase leg Series & SiC parallel diodes MOSFET Power Module
PDF  7 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50AM24SCG датащи(HTML) 4 Page - Microsemi Corporation

  APTM50AM24SCG Datasheet HTML 1Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 2Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 3Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 4Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 5Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 6Page - Microsemi Corporation APTM50AM24SCG Datasheet HTML 7Page - Microsemi Corporation  
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APTM50AM24SCG
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Typical MOSFET Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5.5V
6V
6.5V
7V
7.5V
8V
0
120
240
360
480
600
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
VGS=10&15V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
60
120
180
240
300
360
420
480
012345678
VGS, Gate to Source Voltage (V)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.90
0.95
1.00
1.05
1.10
1.15
1.20
0
60
120
180
240
300
360
ID, Drain Current (A)
Normalized to
VGS=10V @ 75A
0
40
80
120
160
25
50
75
100
125
150
TC, Case Temperature (°C)
DC Drain Current vs Case Temperature



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