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APTM50AM24SCG датащи(PDF) 3 Page - Microsemi Corporation

номер детали APTM50AM24SCG
подробное описание детали  Phase leg Series & SiC parallel diodes MOSFET Power Module
PDF  7 Pages
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производитель  MICROSEMI [Microsemi Corporation]
домашняя страница  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50AM24SCG датащи(HTML) 3 Page - Microsemi Corporation

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SiC Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
400
1600
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 175°C
800
8000
µA
IF
DC Forward Current
Tc = 125°C
80
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 80A
Tj = 175°C
2.0
2.4
V
QC
Total Capacitive Charge
IF = 80A, VR = 300V
di/dt =2000A/µs
112
nC
f = 1MHz, VR = 200V
520
Q
Total Capacitance
f = 1MHz, VR = 400V
400
pF
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.10
Series diode
0.46
RthJC
Junction to Case Thermal Resistance
Parallel diode
0.35
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque
Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com



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