Preliminary PI3033B datasheet

Operating Humidity

Hop

10 to 85

RH %

Storage Temperature

Tstg

-25 to 75

Storage Humidity

Hstg

10 to 90

RH %

Table 3. Absolute Maximum Ratings

Recommended Operating Conditions at Room Temperature

Parameters

Symbol

Min.

Typical

Max.

Units

Power Supply

VDD

4.5

5.0

5.5

Volts

Input clock pulses high level

Vih

(1)

3.0

5.0

VDD

Volts

Input clock pulse low level

Vil

(1)

0

0

0.8

Volts

Operating high level exposed output

IOUT

(2)

See note.

Clock Frequency

Fclk

(3)

0.1

2.0

5.0

MHz

Clock pulse duty cycle

Duty

(4)

25

%

Clock pulse high durations

tw

0.125

µsec

Integration time

Tint

0.864

10

ms

Operating Temperature

Top

25

50

Table 4. Recommended Operating Condition at Room Temperature

Note

(1)

Applies to both CP and SP.

(2)

The output is a current that is proportional to the charges, which are

integrated on the phototransistor’s base via photon-to-electron conversion.

For its conversion to voltage pixels see Figure 4, Video Pixel Output in section

Output Circuit Of The Image Sensor.

(3)

Although the clock frequency, Fclk, will operate the device at less than

100KHz, it is recommended that the device be operated above 500KHz to

avoid complication of leakage current build-up. In applications using long CIS

module length, such as an array of image sensor > 27, increases the readout

time, i.e., increases Tint, hence, leakage current build-up occurs.

(4)

The clock duty cycle typically is normally set to 25 %. However, it can operate

with duty cycle as large as 50 %, which will allow more reset time at the

expense of video pixel readout time.

Page 9 of 13 Date: 03/18/05