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PI0512WS датащи(PDF) 3 Page - AMI SEMICONDUCTOR

номер детали PI0512WS
подробное описание детали  512-Pixel 50-mm-Pitch Wide Aperture Spectroscopic Photodiode Array
PDF  8 Pages
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производитель  AMI [AMI SEMICONDUCTOR]
домашняя страница  http://www.amis.com
Logo AMI - AMI SEMICONDUCTOR

PI0512WS датащи(HTML) 3 Page - AMI SEMICONDUCTOR

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PI0512WS Page 3 of 8 – July 26, 2001
During normal operation, the impinging photons in or near the PN photodiode junction
generate free charges that are collected and stored on the junction's depletion capacitance.
Since on average a certain fraction of charge is generated and collected for each impinging
photon, the number of collected charges will proportionally increase with light exposures.
Figure 3 shows the stored signal charge as function of light exposure at a wavelength of
575 nm. The exposure is the product of the light intensity in nW/cm
2 and integration time in
seconds. The charge accumulates linearly until reaching the saturation charge where the
corresponding exposure is the saturation exposure.
0
10
20
30
40
50
60
70
0
50
100
150
200
Exposure (nJ/cm^2)
Saturation
Charge
Saturation
Exposure
Figure 3. Stored signal charge as function of exposure at a wavelength
of 575 nm.
The responsivity is defined as ratio of saturation charge divided by saturation exposure. The
measured typical responsivity of a photodiode is 3.3
×10-4 C/J/cm2 at 575 nm. Figure 4 shows
the predicted responsivity of the photodiodes as a function of wavelength.
0.0E+00
5.0E-05
1.0E-04
1.5E-04
2.0E-04
2.5E-04
3.0E-04
3.5E-04
4.0E-04
4.5E-04
5.0E-04
100
300
500
700
900
Wavelength (nm)
QE=20%
QE=40%
QE=60%
QE=80%
Figure 4. Predicted spectral response.



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