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APT20M38BVFR датащи(PDF) 3 Page - Advanced Power Technology

номер детали APT20M38BVFR
подробное описание детали  Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
PDF  4 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT20M38BVFR датащи(HTML) 3 Page - Advanced Power Technology

  APT20M38BVFR Datasheet HTML 1Page - Advanced Power Technology APT20M38BVFR Datasheet HTML 2Page - Advanced Power Technology APT20M38BVFR Datasheet HTML 3Page - Advanced Power Technology APT20M38BVFR Datasheet HTML 4Page - Advanced Power Technology  
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V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0
20
40
60
80
100
0
123456
0
2
4
6
8
10
0
40
80
120
160
200
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
I
D = 0.5 ID [Cont.]
V
GS = 10V
150
120
90
60
30
0
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
150
120
90
60
30
0
150
120
90
60
30
0
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
VGS=10V
VGS=20V
TJ = +25°C
TJ = -55°C
TJ = +25°C
TJ = -55°C
5.5V
5V
6V
7V
VGS=15V
6.5V
4.5V
5.5V
5V
6V
6.5V
VGS=10V & 15V
TJ = +125°C
TJ = +125°C
7V
10V
NORMALIZED TO
V
GS = 10V @ 0.5 ID [Cont.]
APT20M38B_SVFR(G)



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