APT20M38BVFR datasheet(1/4 Pages) ADPOW

номер детали	APT20M38BVFR

подробное описание детали	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PDF	4 Pages

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производитель	ADPOW [Advanced Power Technology]

домашняя страница	http://www.advpowertech.com

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Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250µA)

On State Drain Current 2 (V

DS > ID(on) x RDS(on) Max, VGS = 10V)

Drain-Source On-State Resistance 2 (V

GS = 10V, 0.5 ID[Cont.])

Zero Gate Voltage Drain Current (V

DS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (V

DS = 0.8 VDSS, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (V

GS = ±30V, VDS = 0V)

Gate Threshold Voltage (V

DS = VGS, ID = 1.0mA)

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J,TSTG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current 1 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Amps

Ohms

µA

nA

Volts

MIN

TYP

MAX

200

67

0.038

250

1000

±100

24

APT20M38B_SVFR(G)

200

67

268

±30

±40

370

2.96

-55 to 150

300

67

30

1300

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

Power MOS V® is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V® also

achieves faster switching speeds through optimized gate layout.

• Lower Leakage

• Avalanche Energy Rated

• Faster Switching

• Fast Recovery Body Diode

• TO-247 or Surface Mount D3PAK Package

FREDFET

POWER MOS V®

TO-247

D3PAK

BVFR

SVFR

G

D

S

200V 67A 0.038

Ω

APT20M38BVFR

APT20M38SVFR

APT20M38BVFRG* APT20M38SVFRG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Аналогичный номер детали - APT20M38BVFR

производитель	номер детали	датащи	подробное описание детали
Advanced Power Technolo...	APT20M38BVFR	76Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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Аналогичное описание - APT20M38BVFR

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Аналогичный номер детали - APT20M38BVFR

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