ZXMS6004DN8Q

Document number: DS38898 Rev. 1 - 2

3 of 9

www.diodes.com

June 2016

© Diodes Incorporated

ZXMS6004DN8Q

Recommended Operating Conditions

The ZXMS6004DN8Q is optimized for use with µC operating from 3.3V and 5V supplies.

Characteristic

Symbol

Min

Max

Unit

Input Voltage Range

VIN

0

5.5

V

Ambient Temperature Range

TA

-40

+125

°C

High Level Input Voltage for MOSFET to be On

VIH

3

5.5

V

Low Level Input Voltage for MOSFET to be Off

VIL

0

0.7

V

Peripheral Supply Voltage (voltage to which load is referred)

VP

0

36

V

Thermal Characteristics

Characteristic

Symbol

Value

Units

Power Dissipation at TA = +25°C (Note 6)

Linear Derating Factor

PD

1.21

9.7

W

mW/°C

Power Dissipation at TA = +25°C (Note 7)

Linear Derating Factor

PD

1.56

12.5

W

mW/°C

Thermal Resistance, Junction to Ambient (Note 6)

RθJA

103

°C/W

Thermal Resistance, Junction to Ambient (Note 7)

RθJA

81

°C/W

Thermal Resistance, Junction to Case (Note 8)

RθJC

13.5

°C/W

Operating Temperature Range

TJ

-40 to +150

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

8. Thermal resistance between junction and the mounting surfaces of drain and source pins.