ZXMS6004DN8Q

Document number: DS38898 Rev. 1 - 2

5 of 9

www.diodes.com

June 2016

© Diodes Incorporated

ZXMS6004DN8Q

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Static Characteristics

Drain-Source Clamp Voltage

VDS(AZ)

60

65

70

V

ID = 10mA

Off-State Drain Current

IDSS

—

—

1

µA

VDS = 12V, VIN = 0V

—

—

2

VDS = 36V, VIN = 0V

Input Threshold Voltage

VIN(TH)

0.7

1

1.5

V

VDS = VGS, ID = 1mA

Input Current

IIN

—

60

100

µA

VIN = +3V

—

120

200

VIN = +5V

Input Current while Overtemperature Active

—

—

—

300

µA

VIN = +5V

Static Drain-Source On-State Resistance

RDS(ON)

—

400

600

m

Ω

VIN = +3V, ID = 1A

—

350

500

VIN = +5V, ID = 1A

Continuous Drain Current (Notes 6)

ID

0.9

—

—

A

VIN = 3V; TA = +25°C

1.0

—

—

VIN = 5V; TA = +25°C

Continuous Drain Current (Note 6)

1.1

—

—

VIN = 3V; TA = +25°C

1.2

—

—

VIN = 5V; TA = +25°C

Current Limit (Note 9)

ID(LIM)

0.7

1.7

—

A

VIN = +3V

1

2.2

—

VIN = +5V

Dynamic Characteristics

Turn-On Delay Time

tD(ON)

—

5

—

µs

VDD = 12V, ID = 0.5A, VGS = 5V

Rise Time

tR

—

10

—

µs

Turn-Off Delay Time

tD(OFF)

—

45

—

µs

Fall Time

fF

—

15

—

µs

Overtemperature Protection

Thermal Overload Trip Temperature (Note 10)

TJT

+150

+175

—

°C

—

Thermal Hysteresis (Note 10)

fF

—

+10

—

°C

—

Notes:

9. The drain current is restricted only when t

he device is in saturation (see graph ”Typical Output Characteristic”). This allows the device to be used in the

on-state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside

saturation makes current limit unnecessary.

10. Over

temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal

operating range, so this part is not designed to withstand over-temperature for extended periods.