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LT1010CDD датащи(PDF) 15 Page - Linear Technology |
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LT1010CDD датащи(HTML) 15 Page - Linear Technology |
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15 / 20 page ![]() 15 LT1010 1010fc APPLICATIO S I FOR ATIO Typical thermal calculations for the miniDIP package are detailed in the following paragraphs. For 4.8mA supply current (typical at 50 °C, 30V supply voltage—see supply current graphs) to the LT1010 at ±15V, PD = power dissipated in the part is equal to: (30V)(0.0048A) = 0.144W The rise in junction is then: (0.144W)(130 °C/W—This is θJA for the N package) = 18.7 °C. This means that the junction temperature in 50 °C ambient air without driving any current into a load is: 18.7 °C + 50°C = 68.7°C Using the LT1010 to drive 8V DC into a 200 Ω load using ±15V power supplies dissipates PD in the LT1010 where: P VV V R VV V W D OUT OUT L = ()() = ()( ) Ω = + – – . 15 8 8 200 0 280 This causes the LT1010 junction temperature to rise another (0.280W)(0.130 °C/W) = 36.4°C. This heats the junction to 68.7 °C + 36.4°C = 105.1°C. Caution: This exceeds the maximum operating tempera- ture of the device. An example of 1MHz operation further shows the limita- tions of the N (or miniDIP) package. For ±15V operation: PD at IL = 0 at 1MHz* = (10mA)(30V) = 0.30W This power dissipation causes the junction to heat from 50 °C (ambient in this example) to 50°C + (0.3W) (130 °C/W) = 89°C. Driving 2VRMS of 1MHz signal into a 200 Ω load causes an additional P V W D = Ω ⎛ ⎝⎜ ⎞ ⎠⎟ () = 2 200 15 2 0 130 •– . to be dissipated, resulting in another (0.130W) (0.130 °C/W) = 16.9°C rise in junction temperature to 89 °C + 16.9°C = 105.9°C. Caution: This exceeds the maximum operating tempera- ture of the device. Thermal Resistance of DFN Package For surface mount devices, heat sinking is accomplished by using the heat spreading capabilities of the PC board and its copper traces. Copper board stiffeners and plated through-holes can also be used to spread the heat gener- ated by power devices. The following table lists thermal resistance for several different board sizes and copper areas. All measurements were taken in still air on 3/32" FR-4 board with one ounce copper. Table 1. DFN Measured Thermal Resistance COPPER AREA THERMAL RESISTANCE TOPSIDE BACKSIDE BOARD AREA (JUNCTION-TO-AMBIENT) 2500 sq mm 2500 sq mm 2500 sq mm 40 °C/W 1000 sq mm 2500 sq mm 2500 sq mm 45 °C/W 225 sq mm 2500 sq mm 2500 sq mm 50 °C/W 100 sq mm 2500 sq mm 2500 sq mm 62 °C/W For the DFN package, the thermal resistance junction-to- case ( θJC),measuredattheexposedpadonthebackofthe die, is 16 °C/W. Continuous operation at the maximum supply voltage and maximum load current is not practical due to thermal limitations. Transient operation at the maximum supply is possible. The approximate thermal time constant for a 2500sq mm 3/32" FR-4 board with maximum topside and backside area for one ounce copper is 3 seconds. This time constant will increase as more thermal mass is added (i.e. vias, larger board, and other components). For an application with transient high power peaks, aver- age power dissipation can be used for junction tempera- ture calculations as long as the pulse period is significantly less than the thermal time constant of the device and board. *See Supply Current vs Frequency graph. |
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