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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SA910 датащи(PDF) 7 Page - NXP Semiconductors |
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SA910 датащи(HTML) 7 Page - NXP Semiconductors |
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7 / 13 page  Philips Semiconductors Product specification SA910 Variable gain RF predriver amplifier 1997 Aug 12 7 AC ELECTRICAL CHARACTERISTICS VCC1 = VCCBIAS = +3V;VCC(RFOUT1, RFOUT2) = 3.6V; TA = 25°C, ZS = ZL = 50Ω; VC = 2V; RFIN = 0dBm @ 830MHz; unless otherwise stated. SYMBOL PARAMETER TEST CONDITIONS LIMITS UNITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNITS fRF Frequency range 820 830 905 MHz P Load power at RFO Saturated1 21 5 24 dBm PL Load power at RFOUT2 Saturated1 21.5 24 dBm S21 Small signal gain RFin = –20dBm 31 dB η Power added efficiency PL = 24dBm 35 % S11 Input return loss RFin = 0dBm –12 dB GC Gain control range from Vc = 0.7 to 2V dP/dV <120dB/V 32 dB S12 Reverse isolation -40 dB GOFF Gain at RFOUT2 during power-down (RFIN = -20dBm) -30 dB PSENSE Power detector range 25 dB NOTE: 1. Needs proper output matching. |
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