SA910 datasheet(6/13 Pages) PHILIPS

номер детали	SA910

подробное описание детали	Variable gain RF predriver amplifier

PDF	13 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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6 / 13 page

Philips Semiconductors

Product specification

SA910

Variable gain RF predriver amplifier

1997 Aug 12

PIN DESCRIPTIONS

No.

Mnemonic

Function

VCC1

Power supply for power sense loop and off-chip bias

VREF

Power sense reference voltage input

GND

Ground

RFIN

Pre-driver input

GND

Ground

GND

Ground

OUTLPF

Power sense detected output

GND

Ground

Gain control input

VCC BIAS

Power supply for on-chip bias

OFFSET

External power amp bias offset adjustment

PWRUP

Power-up input

GND

Ground

RFOUT2

Pre-driver output (open collector)

GND

Ground

GND

Ground

RFOUT1

Output of first stage (open collector)

GND

Ground

BIASOUT

Output to bias external power amplifier stage

PSENSE

Power sense input

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

RATING

UNITS

VCC1/VCCBIAS

DC supply voltages

-0.3 to +6.0

Voltage applied to any other pin1

-0.3 to (VCC1 + 0.3)

Power dissipation

1.0

Input drive power

PDET

Input detect power

Load power

500

TSTG

Storage temperature range

-65 to +150

°C

NOTE:

1. Except RFOUT1 and RFOUT2 which can have 8V max.

RECOMMENDED OPERATING CONDITIONS

SYMBOL

PARAMETER

RATING

UNITS

VCC1/VCCBIAS

Supply voltage

3 to 3.6

Operating ambient temperature range

-40 to +85

°C

NOTE:

1. Rth = 75° c/w

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