BFG310 datasheet(3/12 Pages) PHILIPS

3 / 12 page

9397 750 14244

Product data sheet

Rev. 01 — 2 February 2005

3 of 12

Philips Semiconductors

BFG310/XR

NPN 14 GHz wideband transistor

Limiting values

[1]

Tsp is the temperature at the soldering point of the collector pin.

Thermal characteristics

[1]

Tsp is the temperature at the soldering point of the collector pin.

Characteristics

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

VCEO

collector-emitter voltage

open base

VEBO

emitter-base voltage

open collector

collector current (DC)

Ptot

total power dissipation

Tsp ≤ 145 °C

[1] -60

Tstg

storage temperature

−65

+175

°C

junction temperature

175

°C

Table 6:

Thermal characteristics

Symbol Parameter

Conditions

Typ

Unit

Rth(j-sp)

thermal resistance from junction to solder point

Tsp ≤ 145 °C

[1] 530

K/W

Table 7:

Characteristics

Tj =25 °C; unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

IE = 0 A; VCB = 5 V

--15

hFE

DC current gain

IC = 5 mA; VCE = 3 V

100

200

CCBS

collector-base capacitance

VCB = 5 V; f = 1 MHz; emitter grounded

0.17

0.3

CCES

collector-emitter capacitance

VCE = 5 V; f = 1 MHz; base grounded

0.28

CEBS

emitter-base capacitance

VEB = 0.5 V; f = 1 MHz; collector grounded

0.22

transition frequency

IC = 5 mA; VCE = 3 V; f = 1 GHz;

Tamb =25 °C

GHz

MSG

maximum stable gain

IC = 5 mA; VCE = 3 V; f = 1.8 GHz;

Tamb =25 °C

-18

|s21|2

insertion power gain

IC = 5 mA; VCE =3V; Tamb =25 °C;

ZS =ZL =50 Ω

f = 1.8 GHz

f = 3 GHz

noise ﬁgure

Γs = Γopt; IC = 1 mA; VCE = 3 V; f = 2 GHz

PL(1dB)

output power at 1 dB gain

compression

IC = 5 mA; VCE = 3 V; f = 1.8 GHz;

Tamb =25 °C; ZS =ZL =50 Ω

1.8

dBm

IP3

third order intercept point

IC = 5 mA; VCE = 3 V; f = 1.8 GHz;

Tamb =25 °C; ZS =ZL =50 Ω

8.5

dBm

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