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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 2 February 2005

7 of 12

Philips Semiconductors

BFG310/XR

NPN 14 GHz wideband transistor

8.

Application information

Table 8:

SPICE parameters of the BFG310 DIE

Sequence

Parameter

Value

Unit

1

IS

16.17

aA

2

BF

210

-

3NF

1

-

4

VAF

50

V

5

IKF

59.83

mA

6

ISE

1.726

fA

7

NE

2.114

-

8BR

6

-

9NR

1

-

10

VAR

2.3

V

11

IKR

10

A

12

ISC

0

aA

13

NC

1.5

-

14

RB

3.6

Ω

15

RE

2.1

Ω

16

RC

1.6

Ω

17

CJE

115.6

fF

18

VJE

866.3

mV

19

MJE

0.285

-

20

CJC

68.18

fF

21

VJC

601

mV

22

MJC

0.123

-

23

XCJC

1

-

24

FC

0.7

-

25

TF

8.3

ps

26

XTF

10

-

27

VTF

1000

V

28

ITF

150

mA

29

PTF

0

deg

30

TR

0

ns

31

KF

0

-

32

AF

1

-

33

TNOM

25

°C

34

EG

1.014

eV

35

XTB

0

-

36

XTI

8

-

37

Q1.AREA

1

-