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MPC18730EPR2 датащи(PDF) 8 Page - Freescale Semiconductor, Inc |
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MPC18730EPR2 датащи(HTML) 8 Page - Freescale Semiconductor, Inc |
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8 / 35 page ![]() Analog Integrated Circuit Device Data 8 Freescale Semiconductor 18730 ELECTRICAL CHARACTERISTICS STATIC Switching Power Supply 2 VOUT2 Output Voltage (Io = 0~80 mA) HG Output Voltage (11) (Isource = 400 µA) (Isink = 400 µA) LG Output Voltage (11) (Isource = 400 µA) (Isink = 400 µA) VOUT2 VDW2TH VDW2TL VDW2BH VDW2BL 1.05 5.2 0 5.2 0 1.15 - - - - 1.25 VGATE 0.3 VGATE 0.3 V Series Pass Power Supply Circuit SREG1 Control Voltage (Io = 5~60 mA) (12) SREG1-Error AMP Input offset voltage (13) SREG2 Control Voltage (Io = 6~80 mA) (12) SREG2-Error AMP Input offset voltage (14) SREG3 Control Voltage (Io = 5~60 mA) (12) SREG3-Error AMP Input offset voltage (15) SREG2G Output Voltage (16) (Isource = 2.5 µA) (Isink = 2.5 µA) VSREG1 SR1OFST VSREG2 SR2OFST VSREG3 SR3OFST SREG2GH SREG2GL 2.7 -13.5 2.7 -17 2.7 -11 5.0 0 2.8 - 2.8 - 2.8 - - - 2.9 24.5 2.9 17 2.9 23 VGATE 0.5 V mV V mV V mV V V Power Switch On Resistance VOUT1 Circuit VOUT2 Circuit RVOUT1 RVOUT2 - - 0.4 0.4 0.6 0.6 W VGATE Power Supply Circuit (Io = 0~6 mA) (17) (Io = 0~6 mA) (18) CH_PUMP Output Voltage (Isource = 2.5 mA) (Isink = 2.5 mA) VGH Voltage (Certified value) VGATE_00 VGATE_10 VO1_SENSE1LH VO1_SENSE_1LL VGH 5.5 4.6 VB x 0.85 0 - 6.0 5.0 - - - 6.5 5.4 VB 0.4 10.5 V V_STDBY Output Voltage for Li_ion (Io = 300 µA) (19) VLVB 1.75 - 2.45 V Notes 11. Connect a transistor with gate capacity of 200 pF or smaller to HG and LG 12. If a capacitor with capacitance of 22 µF is connected to SREGO, use a phase compensation capacitor between SREGO and SREGC when the load is 5 mA (6 mA for SREG2) or lower. The output voltage values shown in the table assume that external resistance is connected as follows: SREGI1 = 3.0 V to 3.3 V, 65.14K Ω between SREGO1 and SREGC1, 34.86KΩ between SREGC1 and GND. SREGI2 = 3.0 V to 3.3 V, 54.46K Ω between SREGO2 and SREGC2, 45.54KΩ between SREGC2 and GND. SREGI3 = 3.0 V to 3.3 V, 73.84K Ω between SREGO3 and SREGC3, 26.16KΩ between SREGC3 and GND. 13. Calculated by the right formula for input offset: SR1OFST = (Vref x 0.77) - (SREGO1 ÷ (100k ÷ 34.86k)) 14. Calculated by the right formula for input offset: SR2OFST = (Vref x 1) - (SREGO1 ÷ (100k ÷ 45.54k)) 15. Calculated by the right formula for input offset: SR3OFST = (Vref x 0.58) - (SREGO1 ÷ (100k ÷ 26.16k)) 16. Connect a transistor with gate capacity of 300 pF or smaller to REG2G. 17. When VGATESEL1 is Low and VGATESEL2 is Low, I/O = 3 mA or higher is certified by specification. 18. When VGATESEL1 is High and VGATESEL2 is Low, I/O = 3 mA or higher is certified by specification. 19. When HVB is 4.2 V and the load from V_STDBY is 0.5 µA or higher. Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions VBATT = 1.2 V, VO1_SENSE = 2.4 V, VGATE= 6.0 V, fCLK = 176.4 kHz unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 27°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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