FDN352AP datasheet(1/5 Pages) EVVOSEMI

номер детали	FDN352AP

подробное описание детали	P-Channel 30 V (D-S) MOSFET

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Features

■ –1.3 A, –30V

RDS(ON) = 180 mΩ @ VGS = –10V

–1.1 A, –30V

RDS(ON) = 300 mΩ @ VGS = –4.5V

■ High performance trench technology for extremely low

RDS(ON).

■ High power version of industry Standard SOT-23 package.

Identical pin-out to SOT-23 with 30% higher power handling

capability.

Applications

■ Notebook computer power management

General Description

These devices are well suited for low voltage and battery pow-

ered applications where low in-line power loss is needed in a

very small outline surface mount package.

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–30

V

VGSS

Gate-Source Voltage

±25

V

ID

Drain Current

– Continuous

(Note 1a)

–1.3

A

– Pulsed

–10

PD

Power Dissipation for Single Operation

(Note 1a)

0.5

W

(Note 1b)

0.46

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

Rev:2023A2

1

SOT–23

1. GATE

2. SOURCE

3. DRAIN

D

S

G

P-Channel 30 V (D-S) MOSFET

FDN352

Аналогичный номер детали - FDN352AP

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Fairchild Semiconductor	FDN352AP	118Kb / 5P	Single P-Channel, PowerTrench
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Аналогичный номер детали - FDN352AP

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