Typical Characteristics

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

0

2

4

6

8

10

0

0.5

1

1.5

2

2.5

3

Q

g, GATE CHARGE (nC)

I

D = -0.9A

V

DS = -10V

-20V

-15V

0

50

100

150

200

05

10

15

20

25

30

-V

DS, DRAIN TO SOURCE VOLTAGE (V)

C

iss

C

oss

C

rss

f = 1 MHz

V

GS = 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1

1

10

100

-V

DS, DRAIN-SOURCE VOLTAGE (V)

DC

10s

1s

100ms

R

DS(ON) LIMIT

V

GS = -10V

SINGLE PULSE

R

JA = 270

oC/W

T

A = 25

oC

10ms

1ms

100

µs

0

10

20

30

40

50

0.0001

0.001

0.01

0.1

1

10

100

1000

t

1, TIME (sec)

SINGLE PULSE

R

JA = 270°C/W

T

A = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

θ

θ

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

RθJA(t) = r(t) * RθJA

RθJA = 270

°C/W

TJ – TA = P * RθJA(t)

Duty Cycle, D = t 1 / t2

P(pk)

t1

t2

Rev:2023A2

4

P-Channel 30 V (D-S) MOSFET

FDN352