FDN338P datasheet(2/2 Pages) EVVOSEMI

номер детали	FDN338P

подробное описание детали	SOT-23 Plastic-Encapsulate MOSFETS

PDF	2 Pages

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производитель	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

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Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static

Drain-

source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-20

Gate-

source threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.4

-1

Gate-

source leakage

IGSS

VDS =0V, VGS =

±8V

±100

Zero

gate voltage drain current

IDSS

VDS =-20V, VGS =0V

-1

µA

Drain-

source on-state resistance

RDS(on)

VGS =-4.5V, ID =-2.8A

0.090

0.112

Ω

VGS =-2.5V, ID =-2.0A

0.110

0.142

Forward

transconductance

gfs

VDS =-5V, ID =-2.8A

6.5

Dynamic

Input

capacitance

Ciss

VDS =-10V,VGS =0V,f =1MHz

405

Output

capacitance

Coss

Reverse

transfer capacitance

Crss

Total

gate charge

VDS =-10V,VGS =-4.5V,ID =-3A

5.5

VDS =-10V,VGS =-2.5V,ID =-3A

3.3

Gate-

source charge

Qgs

0.7

Gate-

drain charge

Qgd

1.3

Gate

resistance

f =1MHz

6.0

Ω

Turn-

on delay time

td(on)

VDD=-10V,

RL=10Ω, ID =-1A,

VGEN=-4.5V,Rg=1Ω

Rise

time

Turn-

off delay time

td(off)

Fall

time

Drain-source body diode characteristics

Continuous

source-drain diode current

TC=25

℃

-1.3

Pulse

diode forward current

ISM

-10

Body

diode voltage

VSD

IS=-0.7A

-0.8

-1.2

Notes :

a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.

b.Guaranteed by design, not subject to production testing.

T =25

℃ unless otherwise specified

Rev:2023A2

SOT-23 Plastic-Encapsulate MOSFETS

FDN338P

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