FDN337N datasheet(2/5 Pages) EVVOSEMI

номер детали	FDN337N

подробное описание детали	N-Channel MOSFET

PDF	5 Pages

Scroll/Zoom	100%

производитель	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

домашняя страница	https://www.evvosemi.com

Logo

2 / 5 page

Electrical Characteristics TA = 25

unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250 A, VGS=0V

VDS=24V, VGS=0V

VDS=24V, VGS=0V, TJ=55

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±8V

±100

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250 A

0.4

VGS=4.5V, ID=2.2 A

VGS=4.5V, ID=2.2 A , TJ=125

110

VGS=2.5V, ID=2 A

On State Drain Current

ID(ON)

VGS=4.5 V, VDS=5 V

Forward Transconductance

gFS

VDS=5 V, ID=2.2 A

Input Capacitance

Ciss

300

Output Capacitance

Coss

145

Reverse Transfer Capacitance

Crss

Total Gate Charge

Gate Source Charge

Qgs

1.1

Gate Drain Charge

Qgd

1.9

Turn-On DelayTime

td(on)

410

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

410

Maximum Body-Diode Continuous Current

0.42

Diode Forward Voltage

VSD

IS=0.42 A,VGS=0V (Note 2)

1.2

Note 2: Pulse Test: Pulse Width

300μs, Duty Cycle

2.0%

Zero Gate Voltage Drain Current

IDSS

VGS=4.5 V, VDD=5 V,

ID = 1A,RGEN=6

RDS(On)

Static Drain-Source On-Resistance

VGS=0V, VDS=10 V, f=1MHz

VGS=4.5 V, VDS=10 V, ID=2.2 A

FDN337N

Rev:2022A2

FDN337N датащи(PDF) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

FDN337N датащи(HTML) 2 Page - EVER SEMICONDUCTOR CO.,LIMITED

Html Pages

1 2 3 4 5

датащи скачать

ссылки URL