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FDN337N датащи(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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FDN337N датащи(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 5 page ![]() D S G Absolute Maximum Ratings TA = 25 unless otherwise noted Symbol Rating Unit VDS 30 VGS ±8 Continuous Drain Current ID 2.2 IDM 10 (Note 1a) 0.5 (Note 1b) 0.46 Thermal Resistance.Junction- to-Ambient (Note 1a) RthJA 250 Thermal Resistance.Junction- to-Case (Note 1) RthJC 75 TJ 150 Tstg -55 to 150 Notes: 1. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R JC is guaranteed by design while R CA is determined by the user's board design. a. 250 /W when mounted on a 0.02 in 2 pad of 2oz Cu. c. 270 /W when mounted on a 0.001in 2 pad of 2oz Cu. Junction Temperature Storage Temperature Range PD W Power Dissipation /W V A Pulsed Drain Current Parameter Drain-Source Voltage Gate-Source Voltage Features VDS (V) =30 V ID = 2.2 A RDS(ON) = 0.065 @ VGS = 4.5 V RDS(ON) = 0.082 @ VGS = 2.5 V FDN337N N-Channel MOSFET 1 2 3 ■ Simplified outline(SOT-23) 1. Gate 2. Source 3. Drain 1 Rev:2022A2 |
Аналогичный номер детали - FDN337N |
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Аналогичное описание - FDN337N |
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