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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MBM29PL65LM90TN датащи(PDF) 13 Page - SPANSION |
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MBM29PL65LM90TN датащи(HTML) 13 Page - SPANSION |
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13 / 56 page  MBM29PL65LM-90/10 13 Common Flash Memory Interface Code Table (Continued) A6 to A0 DQ15 to DQ0 Description 10h 11h 12h 0051h 0052h 0059h Query-unique ASCII string “QRY” 13h 14h 0002h 0000h Primary OEM Command Set 02h : AMD/FJ standard 15h 16h 0040h 0000h Address for Primary Extended Table 17h 18h 0000h 0000h Alternate OEM Command Set (00h = not applicable) 19h 1Ah 0000h 0000h Address for Alternate OEM Extended Table 1Bh 0027h VCC Min (write/erase) DQ7 to DQ4: 1V/bit, DQ3 to DQ0: 100 mV/bit 1Ch 0036h VCC Max (write/erase) DQ7 to DQ4: 1V/bit, DQ3 to DQ0: 100 mV/bit 1Dh 0000h VPP Min voltage (00h = no Vpp pin) 1Eh 0000h VPP Max voltage (00h =no Vpp pin) 1Fh 0007h Typical timeout per single write 2N µs 20h 0007h Typical timeout for Min size buffer write 2N µs 21h 000Ah Typical timeout per individual sector erase 2N ms 22h 0000h Typical timeout for full chip erase 2N ms 23h 0001h Max timeout for write 2N times typical 24h 0005h Max timeout for buffer write 2N times typical 25h 0004h Max timeout per individual sector erase 2N times typical 26h 0000h Max timeout for full chip erase 2N times typical 27h 0017h Device Size = 2N byte 28h 29h 0001h 0000h Flash Device Interface description 01h : × 16 2Ah 2Bh 0005h 0000h Max number of byte in multi-byte write = 2N 2Ch 0001h Number of Erase Block Regions within device (02h = Boot) 2Dh 2Eh 2Fh 30h 007Fh 0000h 0000h 0001h Erase Block Region 1 Information bit 15 to bit 0 : y = number of sectors bit 31 to bit 16 : z = size (z × 256 Byte) 31h 32h 33h 34h 0000h 0000h 0000h 0000h Erase Block Region 2 Information bit 15 to bit 0 : y = number of sectors bit 31 to bit 16 : z = size (z × 256 Byte) |
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