PIMT1 datasheet(3/8 Pages) PHILIPS

номер детали	PIMT1

подробное описание детали	PNP general purpose double transistor

PDF	8 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 8 page

2001 Oct 22

Philips Semiconductors

Product speciﬁcation

PNP general purpose double transistor

PIMT1

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

208

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor

ICBO

collector-base cut-off current

VCB = −30 V; IE =0

−−100

VCB = −30 V; IE = 0; Tj = 150 °C

−−10

µA

IEBO

emitter-base cut-off current

VEB = −4 V; IC =0

−−100

hFE

DC current gain

VCE = −6 V; IC = −1 mA

120

−

VCEsat

collector-emitter saturation

voltage

IC = −50 mA; IB = −5 mA; note 1

−−200

collector capacitance

VCB = −12 V; IE =Ie = 0; f = 1 MHz

−

2.2

transition frequency

VCE = −12 V; IC = −2 mA;

f = 100 MHz

100

−

MHz

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