2001 Oct 22

2

Philips Semiconductors

Product specification

PNP general purpose double transistor

PIMT1

FEATURES

• 600 mW total power dissipation

• Low current (max. 100 mA)

• Low voltage (max. 40 V)

• Reduces number of components and required

PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor pair in an SC-74 (SOT457) plastic

package.

MARKING

PINNING

TYPE NUMBER

MARKING CODE

PIMT1

M1

PIN

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

MAM457

13

2

TR1

TR2

6

4

5

Top view

12

3

65

4

Fig.1

Simplified outline (SC74; SOT457) and

symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor

collector-base voltage

open emitter

−−50

V

collector-emitter voltage

open base

−−40

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

peak base current

−−200

mA

total power dissipation

−

300

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

Per device

total power dissipation

−

600

mW