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PHT6N03T датащи(PDF) 3 Page - NXP Semiconductors

номер детали PHT6N03T
подробное описание детали  TrenchMOS transistor Standard level FET
PDF  10 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PHT6N03T датащи(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
TrenchMOS
™ transistor
PHT6N03T
Standard level FET
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
6.2
A
current
I
DRM
Pulsed reverse drain current
-
-
24.8
A
V
SD
Diode forward voltage
I
F = 3.2 A; VGS = 0 V
-
0.75
1.2
V
I
F = 5.9 A; VGS = 0 V
-
0.85
-
t
rr
Reverse recovery time
I
F = 5.9 A; -dIF/dt = 100 A/µs;
-
115
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 25 V
-
0.3
-
µC
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 5.9 A; VDD ≤ 25 V;
-
-
60
mJ
unclamped inductive turn-off
V
GS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C
energy
November 1997
3
Rev 1.200



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