PHT6N03T datasheet(2/10 Pages) PHILIPS

2 / 10 page

Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT6N03T

Standard level FET

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Electrostatic discharge capacitor

Human body model

voltage, all pins

(100 pF, 1.5 k

Ω)

STATIC CHARACTERISTICS

j= 25˚C

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

(BR)DSS

Drain-source breakdown

GS = 0 V; ID = 0.25 mA;

voltage

j = -55˚C

GS(TO)

Gate threshold voltage

DS = VGS; ID = 1 mA

2.0

3.0

4.0

j = 150˚C

1.0

j = -55˚C

4.4

DSS

Zero gate voltage drain current

DS = 30 V; VGS = 0 V;

0.05

µA

j = 150˚C

500

µA

GSS

Gate source leakage current

GS = ±10 V; VDS = 0 V

0.02

µA

j = 150˚C

µA

±V

(BR)GSS

Gate source breakdown voltage I

G = ±1 mA;

DS(ON)

Drain-source on-state

GS = 10 V; ID = 3.2 A

Ω

resistance

j = 150˚C

Ω

DYNAMIC CHARACTERISTICS

j = 25˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Forward transconductance

DS = 25 V; ID = 5.9 A

g(tot)

Total gate charge

D = 5.9 A; VDD = 24 V; VGS = 10 V

22.5

Gate-source charge

4.5

Gate-drain (Miller) charge

13.5

iss

Input capacitance

GS = 0 V; VDS = 25 V; f = 1 MHz

1500

2000

oss

Output capacitance

370

470

rss

Feedback capacitance

170

250

d on

Turn-on delay time

DD = 15 V; ID = 5.9 A;

Turn-on rise time

GS = 10 V; RG = 5 Ω

3060ns

d off

Turn-off delay time

Resistive load

Turn-off fall time

Internal drain inductance

Measured from contact screw on

3.5

tab to centre of die

Internal drain inductance

Measured from drain lead 6 mm

4.5

from package to centre of die

Internal source inductance

Measured from source lead 6 mm

7.5

from package to source bond pad

November 1997

Rev 1.200

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