Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT11N06T

Standard level FET

Fig.13. Typical turn-on gate-charge characteristics.

V

Fig.14. Typical reverse diode current.

I

Fig.15. Normalised avalanche energy rating.

W

Fig.16. Avalanche energy test circuit.

Fig.17. Switching test circuit.

0

5

10

15

20

0

2

4

6

8

10

12

VGS/V

QG/NC

VDS = 14V

VDS = 44V

20

40

60

80

100

120

140

Tmb / C

120

110

100

90

80

70

60

50

40

30

20

10

0

WDSS%

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0

5

10

15

20

IF/A

VSDS/V

Tj/C =

150

25

L

T.U.T.

VDD

RGS

R 01

VDS

-ID/100

+

-

shunt

VGS

0

W

2

⋅ BV

RD

T.U.T.

VDD

RG

VDS

+

-

VGS

0

December 1997

6

Rev 1.100