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CDCE401 датащи(PDF) 2 Page - Texas Instruments |
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CDCE401 датащи(HTML) 2 Page - Texas Instruments |
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2 / 19 page ![]() www.ti.com EN VDD 1 DRB PACKAGE (TOP VIEW) NC − No internal connection 2 3 4 8 7 6 5 XIN NC XOUT SDATA VSS FOUT P0012-01 CDCE401 SCAS820 – JUNE 2006 An on-die EEPROM enables nonvolatile storage of the frequency setting. For the transfer of the programming into the EEPROM, the CDCE401 takes advantage of the SDATA input. In-circuit programming of the device is possible. Unlike other EEPROM-based devices, it is not necessary to apply a high supply voltage to the device in order to program it. The CDCE401 accepts crystals from 20 MHz up to 100 MHz. For lower frequencies, the CDCE401 provides a programmable post-divider. The CDCE401 features a wide supply-voltage range. This makes the device ideal to use at today’s most commonly used supply voltage of 2.5 V, and operation at supply voltages of 2.8 V, 2.85 V, and 3 V for cellular applications can be addressed with a single device. Therefore, use of the device in multiple different application spaces is possible, reducing inventory costs. The CDCE401 is characterized to work in the industrial temperature range from –40°C to 85°C. Optional: QFN Package Terminal Assignment For evaluation purposes, the CDCE401 is also available in a QFN package. The packaged device can be obtained together with an EVM. Table 1. TERMINAL FUNCTIONS TERMINAL NUMBER TYPE DESCRIPTION NAME QFN BOND PAD Logic select pin. Enables/disables device. Has a hysteresis of 300 mV. A EN 1 1 Input LVCMOS 2-M Ω pullup resistor is built in. FOUT 5 5 Output LVCMOS Frequency output NC 7 N/A Not connected Logic select pin. This input serves as programming input. Has a SDATA 6 7 Input LVCMOS hysteresis of 300 mV. A 2-M Ω pullup resistor is built in. VDD 8 8 Power Voltage supply VSS 4 4 Ground Ground XIN 2 2 Input oscillator Crystal oscillator input XOUT 3 3 Output oscillator Crystal oscillator output 2 Submit Documentation Feedback |
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