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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5706 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5706 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC5706 DESCRIPTION · Large current capacitance · High-speed switching · 100% avalanche tested · High allowable power dissipation · Minimum Lot-to-Lot variations for robust device performance and reliable operation · Complementary to 2SA2039 APPLICATIONS · DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 7.5 A PC Collector Power Dissipation @ TC=25℃ 15 W Collector Power Dissipation @Ta=25℃ 0.8 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2 |
Аналогичный номер детали - 2SC5706 |
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Аналогичное описание - 2SC5706 |
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