FMP3009 datasheet(2/4 Pages) GWSEMI

номер детали	FMP3009

подробное описание детали	Plastic-Encapsulate MOSFETS

PDF	4 Pages

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производитель	GWSEMI [Goodwork Semiconductor Co., Ltd .]

домашняя страница	http://www.goodwork.com.tw/

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2 / 4 page

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static characteristics

Drain-source breakdown voltage

BVDSS

VGS = 0V, ID =-250µA

-30

Zero gate voltage drain current

IDSS

VDS =-

30V,VGS = 0V

-1

µA

Gate-source leakage current

IGSS

VGS =±

12V, VDS = 0V

±100

VGS =-

4.5V, ID =-9A

Ω

Drain-source on-resistance (note 1)

RDS(on)

VGS =-

2.5V, ID =-6A

Ω

Forward tranconductance (note 1)

gFS

VDS =-5V, ID =-

Gate threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

0.6

-0.9

1.5

Diode forward voltage (note 1)

VSD

IS=-

2A,VGS=0V

-1

Dynamic characteristics (note 2)

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

VDS =-15V,VGS =0V,f =1MHz

Switching Characteristics (note 2)

Turn-on delay time

td(on)

Turn-on rise time

Turn-off delay time

td(off)

28.5

Turn-off fall time

VGS=-

4.5V,VDS=-6V,

ID=-9A,RGEN=6Ω

10.5

Notes: 1.

Pulse test: Pulse width

≤300µs, duty cycle ≤2%.

These parameters have no way to verify.

MOSFET ELECTRICAL CHARACTERISTICS

T =25

℃ unless otherwise specified

otal gate charge

13.8

Gate-source charge

Qgs

2.5

Gate-drain charge

Qgd

VGS=-

4.5V,VDS=-6V,

ID=-9A

3.3

FMP3009

P-Channel Enhancement Mode Field Effect Transistor

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