1999 May 27

3

Philips Semiconductors

Preliminary specification

NPN resistor-equipped transistor

PDTC144EEF

THERMAL CHARACTERISTICS

Note

1. Refer to SC-89 (SOT490) standard mounting conditions.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector cut-off current

−−

100

nA

collector cut-off current

−−

1

µA

−−

50

µA

emitter cut-off current

−−

90

µA

DC current gain

80

−−

collector-emitter saturation voltage

−−

150

mV

input-off voltage

−

1.2

0.8

V

input-on voltage

3

1

−

V

R1

input resistor

33

47

61

k

Ω

resistor ratio

0.8

1

1.2

collector capacitance

−−

2.5

pF

R2

R1

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