PDTC144EEF datasheet(4/8 Pages) PHILIPS

номер детали	PDTC144EEF

подробное описание детали	NPN resistor-equipped transistor

PDF	8 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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4 / 8 page

1999 May 27

Philips Semiconductors

Preliminary speciﬁcation

NPN resistor-equipped transistor

PDTC144EEF

Fig.3

DC current gain as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

103

102

MDA916

10−1

(3)

IC (mA)

hFE

102

(1)

(2)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb =25 °C.

(3) Tamb = −40 °C.

handbook, halfpage

10−1

10−2

MDA915

10−1

(1)

(3)

VCEsat

(V)

IC (mA)

102

(2)

Fig.5

Input-off voltage as a function of collector

current; typical values.

VCE =5V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

10−1

MDA918

10−2

10−1

(1)

IC (mA)

Vi(off)

(V)

(2)

(3)

Fig.6

Input-on voltage as a function of collector

current; typical values.

VCE = 0.3 V.

(1) Tamb = −40 °C.

(2) Tamb =25 °C.

(3) Tamb = 100 °C.

handbook, halfpage

102

10−1

MDA917

10−1

110

IC (mA)

Vi(on)

(V)

102

(2)

(3)

(1)

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