DYNAMIC CHARACTERISTICS

APT50M80B2VR_LVR

Note:

Duty Factor D =

t1/t

2

Peak TJ = PDM x ZθJC + TC

t1

t2

SINGLE PULSE

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.25

0.20

0.15

0.10

0.05

0

0.5

0.1

0.3

0.7

0.9

0.05

temperature.

APT Reserves the right to change, without notice, the specifications and information contained herein.

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Test Conditions

V

GS

= 0V

V

DS

= 25V

f = 1 MHz

V

GS

= 10V

V

DD

= 250V

I

D

= 58A @ 25°C

V

GS

= 15V

V

DD

= 250V

I

D

= 58A @ 25°C

R

G

= 0.6

Ω

MIN

TYP

MAX

8797

1286

562

423

41

214

14

25

64

23

UNIT

pF

nC

ns

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

(Body Diode)

GS

= 0V, I

S

= -58A)

Reverse Recovery Time (I

S

= -58A, dl

S

/dt = 100A/µs)

Reverse Recovery Charge (I

S

= -58A, dl

S

/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

UNIT

Amps

Volts

ns

µC

MIN

TYP

MAX

58

232

1.3

680

17.0

THERMAL CHARACTERISTICS

Symbol

MIN

TYP

MAX

0.20

40

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

Symbol

I

S

I

SM

V

SD

t

rr

Q

rr