T-Max

TM

TO-264

MAXIMUM RATINGS

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

G

D

S

APT50M80B2VR

APT50M80LVR

500V

58A 0.080

Ω

Ω

Ω

Ω

Ω

mode power MOSFETs. This new technology minimizes the JFET effect,

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Avalanche Energy Rated

• Lower Leakage

POWER MOS V

®

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250µA)

(V

GS

= 10V, 29A)

Zero Gate Voltage Drain Current (V

DS

= 500V, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 400V, V

GS

= 0V, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 2.5mA)

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Pulsed Drain Current

1

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

4

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

µA

nA

Volts

MIN

TYP

MAX

500

0.080

25

250

±100

24

APT50M80B2VR _ LVR

500

58

232

±30

±40

625

5.0

-55 to 150

300

58

50

3000