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ST10F276 датащи(PDF) 213 Page - STMicroelectronics

номер детали ST10F276
подробное описание детали  16-bit MCU with MAC unit, 832 Kbyte Flash memory and 68 Kbyte RAM
PDF  229 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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ST10F276 датащи(HTML) 213 Page - STMicroelectronics

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ST10F276
Electrical characteristics
213/229
1
Partially tested, guaranteed by design characterization.
The following figures (Figure 57 to Figure 64) present the different configurations of external
memory cycle.
t38
CC
ALE falling edge to
Latched CS
– 4 –
t
A
6 –
t
A
– 4 –
t
A
6 –
t
A
ns
t39
SR
Latched CS low to
Valid Data In
–
16.5 +
t
C + 2tA
–
3TCL – 21+
t
C + 2tA
ns
t41
CC
Latched CS hold after
RD, WR
2 +
t
F
–
TCL – 10.5 +
t
F
–
ns
t82
CC
Address setup to
RdCS, WrCS
(with RW-delay)
14 +
2t
A
–
2TCL – 11 +
2t
A
–
ns
t83
CC
Address setup to
RdCS, WrCS
(no RW-delay)
2 +
2t
A
–
TCL –10.5 +
2t
A
–
ns
t46
SR
RdCS to Valid Data In
(with RW-delay)
–4 +
t
C
–
2TCL – 21 +
t
C
ns
t47
SR
RdCS to Valid Data In
(no RW-delay)
–
16.5 +
t
C
–
3TCL – 21 +
t
C
ns
t48
CC
RdCS, WrCS low time
(with RW-delay)
15.5 +
t
C
–
2TCL – 9.5 +
t
C
–
ns
t49
CC
RdCS, WrCS low time
(no RW-delay)
28 +
t
C
–
3TCL – 9.5 +
t
C
–
ns
t50
CC Data valid to WrCS
10 +
t
C
–
2TCL – 15 +
t
C
–
ns
t51
SR Data hold after RdCS
0–
0
–
ns
t53
SR
Data float after RdCS
(with RW-delay)
–
16.5 +
t
F
–
2TCL – 8.5 +
t
F
ns
t68
SR
Data float after RdCS
(no RW-delay)
–
4 +
t
F
–
TCL – 8.5 +
t
F
ns
t55
CC
Address hold after
RdCS, WrCS
– 8.5 +
t
F
–
– 8.5 +
t
F
–
ns
t57
CC Data hold after WrCS
2 +
t
F
–
TCL – 10.5
+ t
F
–
ns
1.
RW-delay and
t
A refer to the next following bus cycle.
2.
Read data is latched with the same clock edge that triggers the address change and the rising RD edge.
Therefore address changes which occur before the end of RD have no impact on read cycles.
Table 105.
Demultiplexed bus (continued)
Symbol
Parameter
FCPU = 40 MHz
TCL = 12.5ns
Variable CPU clock
1/2 TCL = 1 to 64 MHz
Min.
Max.
Min.
Max.



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