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ST10F276 датащи(PDF) 213 Page - STMicroelectronics |
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ST10F276 датащи(HTML) 213 Page - STMicroelectronics |
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213 / 229 page ![]() ST10F276 Electrical characteristics 213/229 1 Partially tested, guaranteed by design characterization. The following figures (Figure 57 to Figure 64) present the different configurations of external memory cycle. t38 CC ALE falling edge to Latched CS – 4 – t A 6 – t A – 4 – t A 6 – t A ns t39 SR Latched CS low to Valid Data In – 16.5 + t C + 2tA – 3TCL – 21+ t C + 2tA ns t41 CC Latched CS hold after RD, WR 2 + t F – TCL – 10.5 + t F – ns t82 CC Address setup to RdCS, WrCS (with RW-delay) 14 + 2t A – 2TCL – 11 + 2t A – ns t83 CC Address setup to RdCS, WrCS (no RW-delay) 2 + 2t A – TCL –10.5 + 2t A – ns t46 SR RdCS to Valid Data In (with RW-delay) –4 + t C – 2TCL – 21 + t C ns t47 SR RdCS to Valid Data In (no RW-delay) – 16.5 + t C – 3TCL – 21 + t C ns t48 CC RdCS, WrCS low time (with RW-delay) 15.5 + t C – 2TCL – 9.5 + t C – ns t49 CC RdCS, WrCS low time (no RW-delay) 28 + t C – 3TCL – 9.5 + t C – ns t50 CC Data valid to WrCS 10 + t C – 2TCL – 15 + t C – ns t51 SR Data hold after RdCS 0– 0 – ns t53 SR Data float after RdCS (with RW-delay) – 16.5 + t F – 2TCL – 8.5 + t F ns t68 SR Data float after RdCS (no RW-delay) – 4 + t F – TCL – 8.5 + t F ns t55 CC Address hold after RdCS, WrCS – 8.5 + t F – – 8.5 + t F – ns t57 CC Data hold after WrCS 2 + t F – TCL – 10.5 + t F – ns 1. RW-delay and t A refer to the next following bus cycle. 2. Read data is latched with the same clock edge that triggers the address change and the rising RD edge. Therefore address changes which occur before the end of RD have no impact on read cycles. Table 105. Demultiplexed bus (continued) Symbol Parameter FCPU = 40 MHz TCL = 12.5ns Variable CPU clock 1/2 TCL = 1 to 64 MHz Min. Max. Min. Max. |
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