FS100R17N3E4 datasheet(1/5 Pages) ISC

номер детали	FS100R17N3E4

подробное описание детали	IGBT Modules

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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ISGM2048

eq FS100R17N3E4

IGBT Modules

www.iscsemi.com

1

FEATURES

· ExtendedOperationTemperatureTvjop

· Low VCEsat

· VCEsatwithpositiveTemperatureCoefficient

APPLICATIONS

· Motor Drives ,Motion / Servo Drives

· UPSSystems

IGBT, INVERTER

MAXIMUM RATED VALUES(TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

1700

V

VGES

Gate-Emitter Voltage

±

20

V

IC

Collector Current-Continuous

@ TC= 100℃

100

A

ICM

Repetitive Peak Collect Current @tp = 1 ms

200

A

Ptot

Total Power Dissipation ,

TC=25℃

520

W

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCES

Collector-Emitter

Breakdown

Voltage

VGE=0, IC= 0.25mA

1700

-

V

VGE(TH)

Gate-Emitter Threshold Voltage

VGE= VCE, IC= 4mA

5.0

-

6.2

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 100A, VCE= 15V,

TC= 25℃

-

1.65

1.85

V

IC= 100A, VCE= 15V,

TC= 125℃

-

1.62

-

V

ICES

Zero Gate Voltage Collector Current

VCE= 1700V, VGE=0

-

1

mA

IGES

Gate-Emitter Leakage Current

VGE= 20V, VCE=0

-

±

400

nA

Cies

Input Capacitance

VGE = 0V,

VCS = 25V,

f = 1.0MHz

-

9

-

nF

Cres

Reverse Transfer Capacitance

-

0.29

-

Аналогичный номер детали - FS100R17N3E4

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Infineon Technologies A...	FS100R17N3E4	691Kb / 9P	EconoPACK?? Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC 2013-11-11 revision:2.0
	FS100R17N3E4	690Kb / 9P	FS100R17N3E4 2013-11-11
	FS100R17N3E4BOSA1	690Kb / 9P	FS100R17N3E4 2013-11-11
	FS100R17N3E4_B11	542Kb / 9P	Modul mitt Trench/Feldstopp IGB4 2012-01-13 revision:2.0

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Аналогичный номер детали - FS100R17N3E4

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