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FS100R17N3E4 датащи(PDF) 3 Page - Inchange Semiconductor Company Limited

номер детали FS100R17N3E4
подробное описание детали  IGBT Modules
PDF  5 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FS100R17N3E4 датащи(HTML) 3 Page - Inchange Semiconductor Company Limited

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ISGM2048
eq FS100R17N3E4
IGBT Modules
www.iscsemi.com
3
DIODE, RECTIFIER
MAXIMUM RATED VALUES (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
1800
V
IFAV
Forward Current per Diode
100
A
IFSM
Surge Forward Current@tp = 10 ms, half sine wave
TJ = 25°C
960
A
TJ
Operating Junction Temperature
-40-150
℃
SWITCHING CHARACTERISTICS(TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
td(on)
Turn-on Delay Time
VGE = ±15V,
IC= 100A,
VCE = 300V,
RG= 8.2Ω
L = 100 nH,
TJ=25℃
-
95
-
ns
tr
Turn-on Rise Time
-
26
-
td(off)
Turn-off Delay Time
-
240
-
tf
Turn-off Fall Time
-
175
-
Eon
Turn-on switching losses
-
2.2
-
mJ
Eoff
Turn-off switching losses
-
3.4
-
NTC-THERMISTOR
ELECTRICAL CHARACTERIS
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
R25
Ratedresistance
TC=25℃
-
5
-
kΩ
ΔR/R
Deviation of R100
Deviation of R100
-5
-
5
%
P25
Power Dissipation
Power Dissipation
-
-
20
mW
B25/50
B-Value
R2 = R25exp[B25/50(1/T2-1/(298.15K))]
-
3375
-
k
B25/80
R2 = R25exp[B25/80(1/T2-1/(298.15K))]
-
3411
-
k
B25/100
R2 = R25exp[B25/100(1/T2-1/(298.15K))]
-
3433
-
k



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