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AM29DL640G30PCEN датащи(PDF) 42 Page - SPANSION

номер детали AM29DL640G30PCEN
подробное описание детали  64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
PDF  56 Pages
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AM29DL640G30PCEN датащи(HTML) 42 Page - SPANSION

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Am29DL640G
June 6, 2005
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
70
90
120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
40
45
50
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
40
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
30
35
50
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
30
30
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
5
µs
Word
Typ
7
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
t
VCS
V
CC Setup Time (Note 1)
Min
50
µs
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tSEA
Sector Erase Accept Time-Out
Max
80
tESL
Erase Suspend Latency
Max
35
tPSP
Toggle Time During Programming Within a
Protected Sector
TYP
1
tASP
Toggle Time During
Sector Protection
TYP
100



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