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AM41PDS3228DB10IS датащи(PDF) 49 Page - Advanced Micro Devices

номер детали AM41PDS3228DB10IS
подробное описание детали  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
PDF  59 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM41PDS3228DB10IS датащи(HTML) 49 Page - Advanced Micro Devices

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48
Am41PDS3228D
May 13, 2002
P R E L IMINARY
FLASH AC CHARACTERISTICS
Alternate CE#f Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
Parameter
Speed Options
Unit
JEDEC
Std
Description
10
11
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
110
ns
t
AVWL
t
AS
Address Setup Time (WE# to Address)
Min
0
ns
t
ASO
Address Setup Time to CE#f Low During Toggle
Bit Polling
Min
15
ns
tELAX
tAH
Address Hold Time
Min
60
ns
t
AHT
Address Hold time from CE#f or OE# High During
Toggle Bit Polling
Min
0
ns
tDVEH
tDS
Data Setup Time
Min
60
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE#f Pulse Width
Min
60
ns
t
EHEL
t
CPH
CE#f Pulse Width High
Min
60
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
16
µs
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
5
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
1
sec



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