AM29LV065DU101REF datasheet(11/54 Pages) AMD

11 / 54 page

February 16, 2006

Am29LV065D

DEVICE BUS OPERATIONS

This section describes the requirements and use of

the device bus operations, which are initiated through

the internal command register. The command register

itself does not occupy any addressable memory loca-

tion. The register is a latch used to store the com-

mands, along with the address and data information

needed to execute the command. The contents of the

The state machine outputs dictate the function of the

device. Table 1 lists the device bus operations, the in-

puts and control levels they require, and the resulting

output. The following subsections describe each of

these operations in further detail.

Table 1.

Am29LV065D Device Bus Operations

Legend: L = Logic Low = V

IL, H = Logic High = VIH, VID = 8.5–12.5 V, VHH = 11.5–12.5 V, X = Don’t Care, SA = Sector Address,

IN = Address In, DIN = Data In, DOUT = Data Out

Notes:

1. Addresses are A22:A0. Sector addresses are A22:A16.

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Group

Protection and Unprotection” section.

3. All sectors are unprotected when shipped from the factory (The SecSi Sector may be factory protected depending on version

ordered.)

4. D

IN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 2).

VersatileIO

TM (V

IO) Control

The VersatileIO™ (V

IO) control allows the host system

to set the voltage levels that the device generates and

tolerates on CE# and DQ I/Os to the same voltage

level that is asserted on VIO. VIO is available in two

configurations (1.8–2.9 V and 3.0–5.0 V) for operation

in various system environments.

For example, a VI/O of 4.5–5.0 volts allows for I/O at

the 5 volt level, driving and receiving signals to and

from other 5 V devices on the same data bus.

Requirements for Reading Array Data

To read array data from the outputs, the system must

drive the CE# and OE# pins to VIL. CE# is the power

control and selects the device. OE# is the output con-

trol and gates array data to the output pins. WE#

should remain at VIH.

The internal state machine is set for reading array data

upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory

content occurs during the power transition. No com-

mand is necessary in this mode to obtain array data.

Standard microprocessor read cycles that assert valid

addresses on the device address inputs produce valid

data on the device data outputs. The device remains

Operation

CE#

OE#

WE#

RESET#

ACC

Addresses

(Note 2)

DQ0–

DQ7

Read

OUT

Write (Program/Erase)

(Note 4)

Accelerated Program

(Note 4)

Standby

CC ±

0.3 V

CC ±

0.3 V

High-Z

Output Disable

High-Z

Reset

High-Z

Sector Group Protect (Note 2)

SA, A6 = L,

A1 = H, A0 = L

(Note 4)

Sector Group Unprotect

(Note 2)

SA, A6 = H,

A1 = H, A0 = L

(Note 4)

Temporary Sector Group

Unprotect

(Note 4)

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