AM29LV065DU101REF datasheet(52/54 Pages) AMD

52 / 54 page

Am29LV065D

February 16, 2006

REVISION SUMMARY

Revision A (July 27, 2000)

Initial release.

Revision A+1 (August 4, 2000)

Global

Deleted references to the 48-pin reverse TSOP.

Connection Diagrams

Corrected pin 36 on TSOP package to VIO.

Accelerated Program Operation, Unlock Bypass

Command Sequence

Modified caution note regarding ACC input.

Revision A+2 (August 14, 2000)

Ordering Information

Corrected 90 ns entry in V

IO column for FBGA.

Revision A+3 (August 25, 2000)

Table 3, Am29LV065D Autoselect Codes,

(High Voltage Method)

Corrected the SecSI Sector Indicator Bit codes from

80h/00h to 90h/10h.

Revision A+4 (October 19, 2000)

Global

Changed data sheet status to “Preliminary.”

Revision A+5 (November 7, 2000)

Ordering Information

Deleted burn-in option.

Revision A+6 (November 27, 2000)

Pin Description, and Table 11, Write Operation

Status

Deleted references to RY/BY# being available only on

the FBGA package. RY/BY# is also available on the

TSOP package.

Revision A+7 (March 8, 2001)

Global

Deleted “Preliminary” status from document.

Table 4, Sector Group Protection/Unprotection

Address Table

Corrected the sector group address bits for sectors

64–127.

Revision B (January 10, 2002)

Global

Added TSR048 package. Clarified description of Ver-

satileIO (V

IO) in the following sections: Distinctive

Characteristics; General Description; VersatileIO (V

IO)

Control; Operating Ranges; DC Characteristics;

CMOS compatible.

Reduced typical sector erase time from 1.6 s to 0.9 s.

Table 3, Am29LV065D Autoselect Codes,

(High Voltage Method)

Corrected the autoselect code for sector protection

verification.

Sector Group Protection and Unprotection

Deleted reference to previous method of sector protec-

tion and unprotection.

Autoselect Command Sequence

Clarified description of function.

SecSi (Secured Silicon) Sector Flash

Memory Region

Clarified the customer lockable version of this device

can be programmed and protected only once. In Table

5, changed address range in second row.

DC Characteristics

Changed minimum VOH1 from 0.85VIO to 0.8VIO. De-

leted reference to Note 6 for both VOH1 and VOH2.

Erase and Program Operations table

Corrected to indicate t

BUSY specification is a maximum

value.

Erase and Program Performance table

Changed typical sector erase time from 1.6 s to 0.9 s

and typical chip erase time from 205 s to 115 s.

Revision C (March 26, 2004)

SecSi (Secured Silicon) Sector Flash

Memory Region

Modified SecSi Sector protect verify section. Added

algorithm shown in Figure 3.

Common Flash Memory Interface

Modified website for CFI specifications and publica-

tions.

Command Definitions

Modified end of first paragraph to “Writing incorrect

address and data values or writing them in the im-

proper sequence may place the device in an unknown

state. A reset command is required to return the de-

vice to reading array data.”

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