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AM29DL400B датащи(PDF) 41 Page - Advanced Micro Devices

номер детали AM29DL400B
подробное описание детали  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
PDF  47 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DL400B датащи(HTML) 41 Page - Advanced Micro Devices

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Am29DL400B
39
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following
conditions: 25
°C, 3.0 V VCC, 1,000,000 cycles.
Additionally, programming typicals assume
checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V,
1,000,000 cycles.
3. The typical chip programming time is considerably less
than the maximum chip programming time listed, since
most bytes program faster than the maximum program
times listed.
4. In the pre-programming step of the Embedded Erase
algorithm, all bytes are programmed to 00h before
erasure.
5. System-level overhead is the time required to execute
the two- or four-bus-cycle sequence for the program
command. See Table 5 for further information on
command definitions.
6. The device has a guaranteed minimum erase and program
cycle endurance of 1,000,000 cycles.
Parameter
Typ (Note 1)
Max (Note
2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
10
sec
Byte Program Time
9
300
µs
Excludes system level
overhead (Note 5)
Word Program Time
11
360
µs
Chip Program Time
(Note 3)
Byte Mode
4.5
13.5
sec
Word Mode
2.9
8.7



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