November 1994

3

Philips Semiconductors

Preliminary specification

Magnetic field sensor

KM110B/2

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Maximum operating temperature of the thin-film permalloy.

THERMAL CHARACTERISTICS

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

DC supply voltage

−

12

V

total power dissipation

see Fig.5

−

120

mW

storage temperature

note 1

−40

+150

°C

bridge operating temperature

−40

+150

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient

180

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

magnetic field strength

note 1

−2.2

−

+2.2

kA/m

S

sensitivity

open circuit; notes 2 and 3

2.9

3.6.

4.4

temperature coefficient of

output voltage

−−0.4

−

%/K

−−0.1

−

%/K

bridge resistance

1.6

−

2.6

k

Ω

temperature coefficient of

bridge resistance

−

0.3

−

%/K

offset voltage

−0.5

−

+0.5

mV/V

temperature coefficient of

offset voltage

−5

±1.5

5

(

µV/V)/K

FL

linearity deviation of output

voltage

−−

0.5

%

⋅FS

−−

1.7

%

⋅FS

−−

2.0

%

⋅FS

FH

hysteresis of output voltage

−−

0.5

%

⋅FS

f

operating frequency

note 4

0

−

1

MHz

mV V

⁄

kA m

⁄

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