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KM110B/2 датащи(PDF) 4 Page - NXP Semiconductors

номер детали KM110B/2
подробное описание детали  Magnetic field sensor
PDF  6 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

KM110B/2 датащи(HTML) 4 Page - NXP Semiconductors

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November 1994
4
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KM110B/2
Notes to the characteristics
1. Magnet (Ferroxdure 100) delivers an auxiliary field of
Hx = 3.6 kA/m (temperature coefficient: −0.2 %/K).
Above 110
°C the auxiliary field Hx will be <3.0 kA/m;
stable sensor operation may be threatened by
disturbing magnetic fields.
2.
.
3. The sensitivity increases and decreases linear with the
supply voltage, thus the static output voltage is directly
proportional to the supply voltage.
4. Sensor bridge response only. When sensing high
speed rotation, the operating frequency may be
reduced due to eddy current effects.
S
V
O at Hy
1.6 kA/m
=
()
V
O at Hy
0
=
()
1.6
V
CC
×
-----------------------------------------------------------------------------------------------------------------
=
M = direction of magnetization.
N, S = magnetic poles.
Fig.3 Principle of magnetization.
handbook, halfpage
MBD882
43
2
1
Hy
Hx
M
NS
S
Tamb =25 °C; Voffset =0.
Fig.4 Sensor output characteristic.
handbook, halfpage
–2
–1
0
2
8
4
–4
–8
0
MBD885
1
V
(mV/V)
H y (kA/m)
O
Fig.5 Power derating curve.
handbook, halfpage
50
100
125
0
100
MBD892
150
75
50
25
o
( C)
(mW)
tot
200
P
Tamb
0



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