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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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J210 датащи(PDF) 4 Page - NXP Semiconductors |
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J210 датащи(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  1997 Dec 01 4 Philips Semiconductors Product specification N-channel field-effect transistors J210; J211; J212 STATIC CHARACTERISTICS Tj =25 °C. DYNAMIC CHARACTERISTICS Tamb =25 °C. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)GSS gate-source breakdown voltage IG = −1 µA; VDS =0 −−25 V VGSoff gate-source cut-off voltage ID = 1 nA; VDS =15V J210 −1 −3V J211 −2.5 −4.5 V J212 −4 −6V VGSS gate-source forward voltage IG = 0; VDS =0 − 1V IDSS drain current VGS = 0; VDS =15V J10 2 15 mA J11 7 20 mA J12 15 40 mA IGSS reverse gate leakage current VGS = −15 V; VDS =0 −−100 pA y fs common-source transfer admittance VGS = 0; VDS =15V J210 4 12 mS J211 6 12 mS J212 7 12 mS y os common source output admittance VGS = 0; VDS =15V J210 − 150 µS J211 − 200 µS J212 − 200 µS SYMBOL PARAMETER CONDITIONS TYP. UNIT Cis input capacitance VDS =15V; VGS = −10 V; f = 1 MHz 2 pF VDS =15V; VGS = 0; f = 1 MHz 4 pF Cos output capacitance VDS =15V; VGS = −10 V; f = 1 MHz 0.8 pF VDS =15V; VGS = 0; f = 1 MHz 2 pF Crs feedback capacitance VDS =15V; VGS = −10 V; f = 1 MHz 0.8 pF VDS =15V; VGS = 0; f = 1 MHz 0.9 pF gis common source input conductance VDS =15V; VGS = 0; f = 100 MHz 70 µS VDS =15V; VGS = 0; f = 450 MHz 1.1 mS gfs common source transfer conductance VDS =15V; VGS = 0; f = 100 MHz 7.5 mS VDS =15V; VGS = 0; f = 450 MHz 7.5 mS grs common source feedback conductance VDS =15V; VGS = 0; f = 100 MHz −8 µS VDS =15V; VGS = 0; f = 450 MHz −90 µS gos common source output conductance VDS =15V; VGS = 0; f = 100 MHz 95 µS VDS =15V; VGS = 0; f = 450 MHz 200 µS Vn equivalent input noise voltage VDS =15V; VGS = 0; f = 1 kHz 5 nV/ √Hz |
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